Si-interdiffusion in heavily doped AlN-GaN-based quantum well intersubband photodetectors
نویسندگان
چکیده
intersubband photodetectors Daniel Hofstetter, Joab Di Francesco, Denis Martin, Nicolas Grandjean, Yulia Kotsar, and Eva Monroy Institute of Physics, University of Neuchatel, Avenue de Bellevaux 51, 2009 Neuchatel, Switzerland Laboratory of Advanced Semiconductors for Photonics and Electronics, Ecole polytechnique Federale Lausanne, Station 3, 1015 Lausanne, Switzerland INAC/SP2M/NPSC, CEA Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France
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